Publications in

 Down-Shifting Si-based layer for Si solar applications
L. Dumont, P. Benzo, J. Cardin, I. S. Yu, C. Labbe, P. Marie, C. Dufour, G. Zatryb, A. Podhorodecki, F. Gourbilleau
Solar Energy Materials and Solar Cells 169, 132 (2017)

Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells
M. Dyksik, M. Motyka, R. Weih, S. Höfling, M. Kamp, G. Sęk, J. Misiewicz
Optical and Quantum Electronics, Volume 49, Issue 2, Article number 59 (2017)

Mg2SixSn1-x heterostructures on Si(111) substrate for optoelectronics and thermoelectronics
N. G. Galkin, K. N. Galkin, S. A. Dotsenko, I. M. Chernov, A. M. Maslov, L. Dózsa, B. Pécz, Z. Oszáth, I. Cora, D. B. Migas, R. Kudrawiec, J. Misiewicz
Proceedings of SPIE - The International Society for Optical Engineering, Volume 10176, Article number 1017604 (2017)

Robust high-temperature trion emission in monolayers of Mo(SySe1−y)2 alloys
J. Jadczak, A. Delgado, L. Bryja, Y. S. Huang, P. Hawrylak
Phys. Rev. B 95, 195427 (2017)

Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface
Ł. Janicki , M. Gładysiewicz, J. Misiewicz, K. Klosek, M. Sobanska, P. Kempisty, Z. R. Zytkiewicz, R. Kudrawiec
Applied Surface Science, 396, Pages 1657–1666 (2017)

Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures
L. Janicki, G. Kunert, M. Sawicki, E. Piskorska-Hommel, K. Gas, R. Jakiela, D. Hommel, R. Kudrawiec
Scientific Reports 7, Article number: 41877 (2017)

Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films
C. Labbé, Y.-T. An, G. Zatryb, X. Portier, A. Podhorodecki, P. Marie, C. Frilay, J. Cardin and F. Gourbilleau
Nanotechnology, 28 115710 (2017)

Monolayered MoSe2: A candidate for room temperature polaritonics
N. Lundt, A. Maryński, E. Cherotchenko, A. Pant, X. Fan, S. Tongay, G. Sęk, A. V. Kavokin, S. Höfling, C. Schneider
2D Materials, Volume 4, Issue 1, Article number: 015006 (2017)

Surface and shape effects in b-NaGdF4:Yb,Er nanocrystals
A.Noculak, A.Podhorodecki
Nanotechnology 28, 175706 (2017)

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system
M. Pieczarka, M. Syperek, D. Biegańska, C. Gilfert, E. M. Pavelescu, J. P. Reithmaier, J. Misiewicz, G. Sęk
Appl. Phys. Lett. 110, 221104 (2017)

The electronic band structure of Ge1-xSnx in the full composition range: Indirect, direct, and inverted gaps regimes, band offsets, and the Burstein-Moss effect
M. Polak, P. Scharoch, R. Kudrawiec
Journal of Physics D: Applied Physics 50, 195103 (2017)

Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
W. Rudno-Rudziński, M. Syperek, J. Andrzejewski, A. Maryński, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, G. Sęk
AIP Advances 7, 015117 (2017)

Optimizing the active region of interband cascade lasers for passive mode-locking
K. Ryczko, J. Misiewicz, S. Höfling, M. Kamp, G. Sęk
AIP Advances 7, 015015 (2017)

The effect of core and lanthanide ion dopants in sodium fluoride based nanocrystals on phagocytic activity of human blood leukocytes
B. Sojka, A.Liskova, M.Kuricova, M. Banski, J.Misiewicz, M.Dusinska, M. Horvathova, S.Ilavska, M. Szabova, E. Rollerova, A. Podhorodecki, J. Tulinska
J. Nanoparticles Res. 19, 68 (2017)

Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1−xOx alloys
M. Wełna, M Baranowski, R Kudrawiec, Y Nabetani and W Walukiewicz
Semiconductor Science and Technology, Volume 32, Number 1 (2017)

Multicolor emission from intermediate band semiconductor ZnO1−xSex
M. Welna, M. Baranowski, W. M. Linhart, R. Kudrawiec, K. M. Yu, M. Mayer & W. Walukiewicz
Scientific Reports 7, Article number: 44214 (2017)