Publications

Publications in

 Photocurrent measurements of InGaN/GaN quantum wells under hydrostatic and uniaxial pressure
A. Bercha, W. Trzeciakowski, M. Gładysiewicz-Kudrawiec, Y. Ivonyak, S. Grzanka
Journal of Applied Physics 125, 115702 (2019)


Quantum-dot light-emitting diode with ultrathin Au electrode embedded in solution-processed phosphomolybdic acid
M. Chrzanowski, M. Bański, P. Sitarek, J. Misiewicz, A. Podhorodecki
RSC Advances 9, 10754 (2019)


Near-unity indistinguishability single photon source for large-scale integrated quantum optics
Ł. Dusanowski, S.H. Kwon, C. Schneider, S. Höfling
Physical Review Letters 122, 173602 (2019)


Exciton binding energy and hydrogenic Rydberg series in layered ReS2
J. Jadczak, J. Kutrowska-Girzycka, T. Smoleński, P. Kossacki, Y. S. Huang, L. Bryja
Scientific Reports 9, 1578 (2019)


Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2
J. Jadczak, L. Bryja, J. Kutrowska-Girzycka, P. Kapuściński, M. Bieniek, Y.-S. Huang, P. Hawrylak
Nature Communicationsvolume 10, 107 (2019)


Sensitivity of N-polar GaN surface barrier to ambient gases
Ł. Janicki, J. Misiewicz, M. Siekacz, H. Turski, J. Moneta, S. Gorantla, C. Skierbiszewski, R. Kudrawiec
Sensors and Actuators B: Chemical 281, 561 (2019)


Influence of rapid thermal annealing temperature on the photoluminescence of Tb ions embedded in silicon nitride films
M. M. Klak, G. Zatryb, L. W. Golacki, P. Benzo, C. Labbé, J. Cardin, J. Misiewicz, F. Gourbilleau, A. Podhorodecki
Thin Solid Films 675, 5 (2019)


GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes
M. Kurka, M. Dyksik, S. Suomalainen, E. Koivusalo, M. Guina, M. Motyka
Optical Materials 91, 274 (2019)


Optical sensors based on II-VI quantum dots
A. Lesiak, K. Drzozga, J. Cabaj, M. Bański, K. Malecha, A. Podhorodecki
Nanomaterials 9, 192 (2019)


Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells
H. S. Mączko, R. Kudrawiec, M. Gładysiewicz
Scientific Reports 9, 3316 (2019)


Modelling the enhancement of spectrally broadband extraction efficiency of emission from single InAs/InP quantum dots at telecommunication wavelengths
P. Mrowiński, G. Sęk
Physica B: Condensed Matter 562, 141 (2019)


Direct and indirect optical transitions in bulk and atomically thin MoS 2 studied by photoreflectance and photoacoustic spectroscopy
J. Kopaczek1, S. J. Zelewski, M. P. Polak, A. Gawlik, D. Chiappe, A. Schulze, M. Caymax2, R. Kudrawiec
Journal of Applied Physics 125, 135701 (2019)


Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range
P. Podemski, A. Maryński, P. Wyborski, A. Bercha, W. Trzeciakowski, G. Sęk
Journal of Luminescence 212, 300 (2019)


Multiphoton fluorescence excitation and detection with a single negative curvature hollow core fibre
M. Popenda, H. Stawska, M. Syperek, A. Kosolapov, A. Kolyadin, E. Bereś-Pawlik
Laser Physics Letters 16, 15103 (2019)


M-shaped quantum wells for active region of interband cascade laser
K. Ryczko, G. Sȩk
Optical Materials 88, 252 (2019)


Depletion Layer Built-In Field at (1−100), (0001), and (000−1) GaN/Water Junction and Its Role in Semiconductor Nanowire Water Splitting
H. Stokowski, Ł. Janicki, J. Serafińczuk, M. Siekacz, C. Skierbiszewski, R. Kudrawiec
Advanced Materials Interfaces 6, 1801497 (2019)


Layer number dependence of the work function and optical properties of single and few layers MoS2: Effect of substrate
M. Tamulewicz, J. Kutrowska-Girzycka, K. Gajewski, J. Serafińczuk, A. Sierakowski, J. Jadczak, L. Bryja, T. P Gotszalk
Nanotechnology 30, 245708 (2019)


Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs
M. Wełna, K. Żelazna, A. Létoublon, C. Cornet, R. Kudrawiec
Solar Energy Materials and Solar Cells 196, 131 (2019)