Photoluminescence & PLE

The emission based experiments are usually performed in the photoluminescence (PL) setup, where the excitation beam from lasers (Ar+, Nd: YAG, He-Ne) is mechanically chopped and the detection is realized in the lock-in technique. Laboratory for Optical Spectroscopy of Nanostructures contains several Jobin-Yvon monochromators and photodetectors, enabling the measurements in the spectral range from 250 nm up to 5 µm. The other possibility of PL measurements is the application of the CCD camera or the InGaAs linear detector array, covering the spectral range from 250 nm up to 1.6 µm. Liquid helium cryostats and closed cycle helium coolers provide the possibility of carrying out the experiments at the temperature range from 4.2 to 400 K. The studies in the magnetic fields up to 5 T in the temperatures 1.5-300 K are also possible with the Oxford Instruments optical cryostat with superconducting magnet. AOS lab performs also the PL measurements with a high spatial resolution (below 1 µm), the so called µPL. It is done in the special helium cryostat, and the beam is focused with a Mitutoyo microscope objective. The stability of the setup is provided by the Newport optical table with active vibrations damping system. Another technique based on emission is the photoluminescence excitation (PLE), where the emission signal is detected as a function of excitation wavelength. In order to perform such a measurements, the PL setups are used, and the excitation beam is provided either by tunable lasers (Dye Laser, Ti: Sapphire Laser) or by the light from a halogen lamp dispersed by the monochromator. PLE is performed for the range of excitation wavelengths from 250 nm to 1.3 µm.

Representative papers

Low- and high-energy photoluminescence from GaAs1-xBix with 0 < x <= 0.042
J. Kopaczek, R. Kudrawiec, W. Linhart, M. Rajpalke, T. Jones, M. Ashwin, T. Veal
Applied Physics Express 7, 111202 (2014)
Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap
M. Latkowska, R. Kudrawiec, F. Janiak, M. Motyka, J. Misiewicz, Q. Zhuang, A. Krier, W. Walukiewicz
Appl. Phys. Lett. 102, 122109 (2013)
Correlations between the band structure, activation energies of electron traps, and photoluminescence in n-type GaNAs layers
R. Kudrawiec, M. Latkowska, M. Welna, J. Misiewicz, M. Shafi, R. H. Mari, M. Henini, W. Walukiewicz
Appl. Phys. Lett.101 082109 (2012)